$A$ waveform is applied to the following circuit. Assuming an ideal diode configuration and $R_1 = R_2$, which of the following output waveforms will be produced?

If $Si$ and $Ge$ diodes have barrier potentials of $0.7 \ V$ and $0.3 \ V$ respectively,as shown in the circuit,find the values of $V_0$ and $I$. If the $Ge$ diode connection is reversed,find the new values of $V_0$ and $I$ respectively.

Find the value of $V_{AB}$ in the given circuit.

Which of the following is correct with respect to the following statements? Due to diffusion of electrons from $n$ to $p$-side:
$I$. electrons are accumulated in the depletion region.
$II$. electron drift current is from $p$-side to $n$-side.
$III$. an ionised donor is left in the $n$-region.
$IV$. electrons of $n$-side come to $p$-side and electron-hole combination takes place in $p$-side.
Select the correct option from the following.

If each diode has a forward bias resistance of $25\,\Omega$ in the circuit shown below,which of the following options is correct?

Assuming that the junction diode is ideal, find the current in the arrangement shown in the figure. (in $\text{mA}$)